Semiconductor device and manufacturing method thereof
US8080458B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2010 |
| Grant date | Dec 20, 2011 |
| Priority date | — |
| Expiry date | Apr 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/512
Abstract
A method of manufacturing a semiconductor device includes the steps of forming a first columnar semiconductor layer on a substrate forming a first flat semiconductor layer forming a first semiconductor layer of a second conductive type, and forming a first insulating film. The method further includes the steps of forming a gate insulating film and a gate electrode, forming a second semiconductor layer of the second conductive type, forming a semiconductor layer of a first conductive type and forming a metal-semiconductor compound. The first insulating film has a thickness larger than that of the gate insulating film formed around the first columnar silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.