Method for growth of nitrogen face (N-face) polarity compound nitride semiconductor device with integrated processing system
US8080466B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2010 |
| Grant date | Dec 20, 2011 |
| Priority date | — |
| Expiry date | Aug 10, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/817
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Embodiments described herein generally relate to apparatus and methods for forming Group III-V materials by metal-organic chemical vapor deposition (MOCVD) processes and hydride vapor phase epitaxial (HVPE) processes. In one embodiment, a method for fabricating a nitrogen-face (N-face) polarity compound nitride semiconductor device is provided. The method comprises depositing a nitrogen containing buffer layer having N-face polarity over one or more substrates using a metal organic chemical vapor deposition (MOCVD) process to form one or more substrates having N-face polarity and depositing a gallium nitride (GaN) layer over the nitrogen containing buffer layer using a hydride vapor phase epitaxial (HVPE) deposition process, wherein the nitrogen containing buffer layer and the GaN layer are formed without breaking vacuum and exposing the one or more substrates to atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.