Slurry composition and method for chemical mechanical polishing of copper integrated with tungsten based barrier metals
US8080505B2 · kind B2 · utility
7Cited by
6References
24Claims
0Family size
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Key dates
| Filing date | Jun 8, 2009 |
| Grant date | Dec 20, 2011 |
| Priority date | — |
| Expiry date | Nov 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention is related to a slurry composition for polishing copper integrated with tungsten containing barrier layers and its use in a CMP method. The present invention is also related to a method for polishing copper integrated with tungsten containing barrier layers by means of an aqueous solution containing abrasive particles, an inorganic acid such as HNO3 as etchant for copper that prevents galvanic corrosion of the tungsten containing metal barrier and at least one organic compound to provide sufficient copper corrosion inhibition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.