Ion implanter, internal structure of ion implanter and method of forming a coating layer in the ion implanter
US8080813B2 · kind B2 · utility
1Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2008 |
| Grant date | Dec 20, 2011 |
| Priority date | — |
| Expiry date | Oct 6, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/022
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implanter includes a process chamber and a coating layer. The process chamber receives a substrate and provides a space to perform an ion implantation process on the substrate. The coating layer is disposed on an inner wall of the process chamber to reduce contamination of the substrate and includes the same material as that of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.