Carbon nanotube-based structures and methods for removing heat from solid-state devices

US8080871B2 · kind B2 · utility

Assignee

• SAMSUNG ELECTRONICS CO., LTD. · KR

Inventors

• Carlos Dangelo · Los Gatos, US
• Ephraim Suhir · Dover, US
• Subrata Dey · St. Petersburg, US
• Barbara Wacker · Saratoga, US
• Yuan Xu · Singapore, SG
• Arthur Boren · San Jose, US
• Darin Olsen · Menlo Park, US
• Yi Zhang · Pasadena, US
• Peter Schwartz · Livermore, US
• Bala Padmakumar · Mountain View, US

Key dates

• Filing date: Jul 22, 2008
• Grant date: Dec 20, 2011
• Expiry date: Jan 6, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/762
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

One aspect of the invention includes a copper substrate; a catalyst on top of the copper substrate surface; and a thermal interface material that comprises a layer containing carbon nanotubes that contacts the catalyst. The carbon nanotubes are oriented substantially perpendicular to the surface of the copper substrate. A Raman spectrum of the layer containing carbon nanotubes has a D peak at ˜1350 cm−1 with an intensity ID, a G peak at ˜1585 cm−1 with an intensity IG, and an intensity ratio ID/IG of less than 0.7 at a laser excitation wavelength of 514 nm. The thermal interface material has: a bulk thermal resistance, a contact resistance at an interface between the thermal interface material and the copper substrate, and a contact resistance at an interface between the thermal interface material and a solid-state device. A summation of these resistances has a value of 0.06 cm2K/W or less.