Technique for correcting hotspots in mask patterns and write patterns
US8082525B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2009 |
| Grant date | Dec 20, 2011 |
| Priority date | — |
| Expiry date | Feb 25, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70291
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Embodiments of a method for determining a mask pattern to be used on a photo-mask in a lithography process are described. This method may be performed by a computer system. During operation, this computer system receives at least a portion of a first mask pattern including first regions that violate pre-determined rules associated with the photo-mask. Next, the computer system determines a second mask pattern based on at least the portion of the first mask pattern, where the second mask pattern includes second regions that are estimated to comply with the pre-determined rules. Note that the second regions correspond to the first regions, and the second mask pattern is determined using a different technique than that used to determine the first mask pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.