Apparatus for generating gas plasma, gas composition for generating plasma and method for manufacturing semiconductor device using the same
US8083892B2 · kind B2 · utility
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Key dates
| Filing date | Mar 13, 2009 |
| Grant date | Dec 27, 2011 |
| Priority date | — |
| Expiry date | May 2, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.