Patterning method using a combination of photolithography and copolymer self-assemblying lithography techniques
US8083958B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2007 |
| Grant date | Dec 27, 2011 |
| Priority date | — |
| Expiry date | Oct 25, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/895
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are embodiments of a lithographic patterning method that incorporates a combination of photolithography and self-assembling copolymer lithography techniques in order to create, on a substrate, a grid-pattern mask having multiple cells, each with at least one sub-50 nm dimension. The combination of different lithographic techniques further allows for precise registration and overlay of the individual grid-pattern cells with corresponding structures within the substrate. The resulting grid-pattern mask can then be used, in conjunction with directional etch and other processes, to extend the cell patterns into the substrate and, thereby form openings, with at least one sub-50 nm dimension, landing on corresponding in-substrate structures. Once the openings are formed, additional structures can be formed within the openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.