Method for forming minute pattern and method for forming semiconductor memory device using the same
US8083962B2 · kind B2 · utility
7Cited by
13References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2007 |
| Grant date | Dec 27, 2011 |
| Priority date | — |
| Expiry date | Jun 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/231
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a minute pattern includes depositing a material layer on a semiconductor substrate having a conductive region, forming a first mask layer on the material layer, forming a recess region in the first mask layer, performing layer processing to form a first mask pattern in the recess region, and etching the material layer to form a material layer pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.