Semiconductor device and manufacturing method thereof
US8084277B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2009 |
| Grant date | Dec 27, 2011 |
| Priority date | — |
| Expiry date | Oct 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/688
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and manufacturing method thereof improving moisture resistance of a FeRAM. After a probe test using a pad, a metal film is formed to cover the pad in an opening of a protective film and a region from the pad to an opening outer periphery of the protective film. On the metal film, a metal bump is formed. The metal film is formed to have a two-layer structure of the first and second metal films. Materials of the lower and upper layers are selected mainly in consideration of adhesion to the protective film and adhesion to the metal bump, respectively. Film formation conditions thereof are set to provide metal films with a desired quality and thickness. Thus, penetration of moisture from the pad or the periphery into a ferroelectric capacitor can be prevented and therefore, occurrence of potential inversion abnormalities due to penetrated moisture can be effectively suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.