Patent · US Active

Wafer-level In-P Si bonding for silicon photonic apparatus

US8084282B2 · kind B2 · utility

0Cited by

1References

12Claims

0Family size

Assignee

Intel Corporation · US

Inventors

John Heck · Berkeley, US
Richard Jones · San Mateo, US
Matthew Sysak · Lompoc, US

Key dates

Filing date	Apr 2, 2010
Grant date	Dec 27, 2011
Priority date	—
Expiry date	Apr 2, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/34306
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Wafer-level bonding of the hybrid laser portion of a silicon photonics platform is done by forming a weakened level in a semiconductive pillar that supports laser-active layers by ion implantation into the semiconductive pillar without penetrating the laser-active layers, and by separating the laser-active layers from the semiconductive pillar by cracking the weakened level by an epitaxial lift-off processes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.