Method of forming replacement metal gate with borderless contact and structure thereof
US8084311B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2010 |
| Grant date | Dec 27, 2011 |
| Priority date | — |
| Expiry date | Nov 17, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/926
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention provide a method of forming borderless contact for transistor in a replacement metal gate process. The method includes forming a gate on top of a substrate and forming spacers adjacent to sidewalls of the gate; lowering height of the spacers to expose a top portion of the sidewalls of the gate; depositing an etch-stop layer covering the spacers and the upper portion of the sidewalls of the gate; making an opening at a level that is above the spacers and in the upper portion of the sidewalls to expose the gate; and replacing material of the gate from the opening with a new gate material thereby forming a replacement gate. The method further creates a via opening in an inter-level dielectric layer surrounding the gate and spacers, with the via opening exposing the etch-stop layer; removing the etch-stop layer and fill the via opening with a metal material to form borderless contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.