Inventor · Cohoes, NY, US

Su Chen Fan

118Patents

10h-index

117Co-inventors

83Inventor score

Filing activity: Oct 13, 1999 → Sep 21, 2023

Most-cited inventions

Patent	Title	Area	Cited by	Status
US8084311B1	Method of forming replacement metal gate with borderless contact and structure thereof	Emerging Cross-Sectional Technologies	36	Active
US9257348B2	Methods of forming replacement gate structures for transistors and the resulting devices	Electricity	31	Active
US8772168B2	Formation of the dielectric cap layer for a replacement gate structure	Electricity	25	Active
US8679968B2	Method for forming a self-aligned contact opening by a lateral etch	Electricity	18	Active
US9397049B1	Gate tie-down enablement with inner spacer	Electricity	15	Active
US10020381B1	Embedded bottom metal contact formed by a self-aligned contact process for vertical transistors	Electricity	11	Active
US9570573B1	Self-aligned gate tie-down contacts with selective etch stop liner	Electricity	11	Active
US8383490B2	Borderless contact for ultra-thin body devices	Electricity	11	Active
US7371663B2	Three dimensional IC device and alignment methods of IC device substrates	Electricity	11	Active
US8679909B2	Recessing and capping of gate structures with varying metal compositions	Electricity	10	Active
US9728462B2	Stable multiple threshold voltage devices on replacement metal gate CMOS devices	Electricity	10	Active
US7781892B2	Interconnect structure and method of fabricating same	Electricity	9	Active
US8124525B1	Method of forming self-aligned local interconnect and structure formed thereby	Electricity	8	Active
US9293551B2	Integrated multiple gate length semiconductor device including self-aligned contacts	Electricity	8	Active
US9576901B1	Contact area structure and method for manufacturing the same	Electricity	8	Active
US8957465B2	Formation of the dielectric cap layer for a replacement gate structure	Electricity	7	Active
US9455254B2	Methods of forming a combined gate and source/drain contact structure and the resulting device	Electricity	7	Active
US9385123B2	STI region for small fin pitch in FinFET devices	Electricity	6	Active
US9570397B1	Local interconnect structure including non-eroded contact via trenches	Electricity	5	Active
US8796783B2	Borderless contact structure employing dual etch stop layers	Electricity	5	Active
US6254739A	Pre-treatment for salicide process	Chemistry; Metallurgy	5	Expired
US9583442B2	Interconnect structure including middle of line (MOL) metal layer local interconnect on etch stop layer	Electricity	5	Active
US11171051B1	Contacts and liners having multi-segmented protective caps	Electricity	4	Active
US10943990B2	Gate contact over active enabled by alternative spacer scheme and claw-shaped cap	Electricity	4	Active
US10832943B2	Gate contact over active region with self-aligned source/drain contact	Electricity	4	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.