Replacement metal gate method
US8084346B1 · kind B1 · utility
16Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2010 |
| Grant date | Dec 27, 2011 |
| Priority date | — |
| Expiry date | Oct 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/015
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming a dummy gate in a dielectric layer on a substrate, the dummy gate including a sacrificial oxide layer and a dummy gate body over the sacrificial oxide layer; removing the dummy gate body resulting in a gate opening with the sacrificial oxide layer in a bottom of the gate opening; performing an off-axis sputtering to create an angled entrance on the gate opening; removing the sacrificial oxide layer; and forming a replacement gate in the gate opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.