Method of manufacturing a nano structure by etching, using a substrate containing silicon
US8084365B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2010 |
| Grant date | Dec 27, 2011 |
| Priority date | — |
| Expiry date | Sep 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3083
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a nano structure by etching, using a substrate containing Si. A focused Ga ion or In ion beam is irradiated on the surface of the substrate containing Si. The Ga ions or the In ions are injected while sputtering away the surface of the substrate so that a layer containing Ga or In is formed on the surface of the substrate. Dry etching by a gas containing fluorine (F) is performed with the layer containing the Ga or the In formed on the surface of the substrate taken as an etching mask, and the nano structure is formed having a pattern of at least 2 μm tin in depth according to a predetermined line width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.