Manufacturing method of semiconductor device for enhancing the current drive capability
US8084373B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Jun 30, 2010 |
| Grant date | Dec 27, 2011 |
| Priority date | — |
| Expiry date | Jun 30, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a semiconductor device is provided which can uniformly form a good and thin silicon oxide film or the like at a relatively low temperature. In step 1, a semiconductor substrate is exposed to monosilane (SiH4). Then, in step 2, the remaining monosilane (SiH4) is emitted. In step 3, the semiconductor substrate is exposed to nitrous oxide plasma. A desired silicon oxide film is formed by repeating one cycle including steps 1 to 3 until a necessary thickness of the film is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.