Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys

US8084763B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Roy B. Chung · Goleta, US
• Zhen Chen · Stanford, US
• James S. Speck · Fremont, US
• Steven P. DenBaars · Goleta, US
• Shuji Nakamura · Goleta, US

Key dates

• Filing date: Nov 2, 2009
• Grant date: Dec 27, 2011
• Expiry date: Nov 2, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/3211
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A high-power and high-efficiency light emitting device with emission wavelength (λpeak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.