Inventor · Stanford, CA, US

Zhen Chen

45Patents
8h-index
104Co-inventors
74Inventor score

Filing activity: Sep 22, 2006 → Sep 12, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US8828884B2 Multi-level contact to a 3D memory array and method of making Electricity 32 Active
US10553599B1 Three-dimensional memory device containing drain select isolation structures and on-pitch channels and methods of making the same without an etch stop layer Electricity 21 Active
US9230905B2 Trench multilevel contact to a 3D memory array and method of making thereof Electricity 13 Active
US10290803B2 Three-dimensional devices with wedge-shaped contact region and method of making thereof Electricity 12 Active
US8395167B2 External light efficiency of light emitting diodes Electricity 10 Active
US8686430B2 Buffer layer for GaN-on-Si LED Electricity 10 Active
US8994099B2 Multi-level contact to a 3D memory array and method of making Electricity 8 Active
US10290681B2 Array of hole-type surround gate vertical field effect transistors and method of making thereof Electricity 8 Active
US9305935B2 Multi-level contact to a 3D memory array and method of making Electricity 6 Active
US10770620B2 Epitaxial gallium nitride based light emitting diode and method of making thereof Electricity 4 Active
US8669585B1 LED that has bounding silicon-doped regions on either side of a strain release layer Electricity 4 Active
US8084763B2 Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys Electricity 4 Active
US8865565B2 LED having a low defect N-type layer that has grown on a silicon substrate Electricity 3 Active
US9012939B2 N-type gallium-nitride layer having multiple conductive intervening layers Electricity 3 Active
US8395165B2 Laterally contacted blue LED with superlattice current spreading layer Electricity 2 Active
US9570657B2 LED that has bounding silicon-doped regions on either side of a strain release layer Electricity 2 Active
US10822938B2 Methods of optimizing well spacing for shale gas development Physics 2 Active
US8653503B2 Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys Electricity 2 Active
US8120012B2 Group III nitride white light emitting diode Electricity 2 Active
US11968825B2 Three-dimensional memory device containing on-pitch drain select level structures and methods of making the same Electricity 1 Active
US8357925B2 Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys Electricity 1 Active
US11069837B2 Sub pixel light emitting diodes for direct view display and methods of making the same Electricity 1 Active
US9690409B2 Touch three-dimensional grating and display device Physics 1 Active
US11430830B2 White light emitting diode (LED) and method of repairing light emitting device using same Electricity 1 Active
US11264539B2 Light emitting diodes containing deactivated regions and methods of making the same Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.