Patent · US Active

CPP-type magnetoresistance effect element having a pair of free layers

US8085512B2 · kind B2 · utility

3Cited by
4References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 11, 2008
Grant dateDec 27, 2011
Priority date
Expiry dateSep 27, 2030

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11B2005/3996
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

A magnetic field detecting element comprises: a stack which includes first, second and third magnetic layers whose magnetization directions depend upon an external magnetic field, the second magnetic layer being positioned between the first magnetic layer and the third magnetic layer, a first non-magnetic intermediate layer sandwiched between the first magnetic layer and the second magnetic layer, and a second non-magnetic intermediate layer sandwiched between the second magnetic layer and the third magnetic layer, wherein the stack is adapted such that sense current flows in a direction that is perpendicular to a film surface thereof; and a bias magnetic layer which is provided on a side of the stack, the side being opposite to an air bearing surface of the stack.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.