Heater chips with silicon die bonded on silicon substrate
US8087756B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2011 |
| Grant date | Jan 3, 2012 |
| Priority date | — |
| Expiry date | May 6, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49401
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A heater chip has a substrate and at least one die, made of silicon, and a bond non-adhesively attaching them. The substrate, thick enough to resist bowing, has ink supply vias from back to front surfaces. The die has ink flow vias from back to front surfaces and circuitry including heater elements adjacent the front surface interspersed with ink flow vias. The at least one die is superimposed on the substrate such that ink supply vias of the substrate align with ink flow vias of the die and portions of substrate front surface and die back surface are aligned, disposed adjacent and facing one another. The bond formed between substrate and die facing surface portions is hermetic and equal in strength to a Si—O bond. A metal through the die connects a conductor on a front of the substrate to a heater element on a front of the die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.