Deep-eutectic melt growth of nitride crystals
US8088220B2 · kind B2 · utility
18Cited by
78References
23Claims
0Family size
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Key dates
| Filing date | May 23, 2008 |
| Grant date | Jan 3, 2012 |
| Priority date | — |
| Expiry date | Aug 1, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B13/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In accordance with various embodiments, crystalline structures are formed by providing, at a growth temperature, a liquid comprising AlN and having a quality factor greater than approximately 0.14 and forming solid AlN from the liquid, the growth temperature being lower than the melting point of AlN.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.