Method of growing, on a dielectric material, nanowires made of semi-conductor materials connecting two electrodes

US8088674B2 · kind B2 · utility

Assignees

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
• CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE · FR

Inventors

• Thomas Ernst · Morette, FR
• Thierry Baron · Pessac, FR
• Pierre Ferret · Grenoble, FR
• Pascal Gentile · Voiron, FR
• Bassem Salem · Saint-Égrève, FR

Key dates

• Filing date: Nov 27, 2008
• Grant date: Jan 3, 2012
• Expiry date: Nov 27, 2028

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/938
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Electrodes made from metallic material are formed on a layer of dielectric material. A bottom layer of at least one of the electrodes constitutes a catalyst material in direct contact with the layer of dielectric material. Nanowires are grown by means of the catalyst, between the electrodes, parallel to the layer of dielectric material. The nanowires connecting the two electrodes are then made from single-crystal semi-conductor material and in contact with the layer of dielectric material.