Image sensor with global shutter and in pixel storage transistor
US8089036B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 30, 2009 |
| Grant date | Jan 3, 2012 |
| Priority date | — |
| Expiry date | May 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor includes a photodiode to accumulate an image charge and a storage transistor to store the image charge. A transfer transistor is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge to a readout node and a reset transistor is coupled to the readout node. A controller is configured to apply a negative voltage to a gate of the storage transistor before activating the gate of the storage transistor to store the image charge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.