Semiconductor device and method for manufacturing the same
US8089144B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2009 |
| Grant date | Jan 3, 2012 |
| Priority date | — |
| Expiry date | Feb 1, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a sensor including a sensor structure on a first side of the sensor and a periphery element surrounding the sensor structure; and a cap covering the sensor structure and having a second side bonded to the first side of the sensor. The cap includes a first wiring layer on the second side of the cap. The first wiring layer steps over the periphery element. The sensor further includes a sensor side connection portion, and the cap further includes a cap side connection portion. The sensor side connection portion is bonded to the cap side connection portion. At least one of the sensor side connection portion and the cap side connection portion provides an eutectic alloy so that the sensor side connection portion and the cap side connection portion are bonded to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.