Manufacturing method for liquid discharge head substrate
US8091234B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2008 |
| Grant date | Jan 10, 2012 |
| Priority date | — |
| Expiry date | Nov 2, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49401
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A manufacturing method, for a liquid discharge head that includes a silicon substrate in which a supply port is formed for supplying a liquid, includes the steps of providing the silicon substrate, a mask layer provided with an opening that corresponds to the supply port being provided on one face of the silicon substrate; forming a groove in the silicon substrate along the shape of the opening in the mask layer; removing, via sandblasting, silicon of the silicon substrate inward of the groove in the silicon substrate; and performing, from the one face, anisotropic etching of the silicon substrate that has been sandblasted, and forming the supply port.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.