Plasma processing apparatus and semiconductor device manufactured by the same apparatus
US8092640B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2006 |
| Grant date | Jan 10, 2012 |
| Priority date | — |
| Expiry date | Feb 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3244
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus of this invention includes a sealable chamber, a gas supply source of reactive material gas, placed outside the chamber, a gas introduction pipe connected to the gas supply source, for introducing the material gas into the chamber, and a plurality of sets of cathode-anode bodies for forming a plurality of discharge spaces which perform plasma discharge of the material gas in the chamber. Herein, the gas introduction pipe includes a gas branch section arranged in the chamber, a main pipe for connecting the gas supply source to the gas branch section, and a plurality of branch pipes connected from the main pipe to each of the discharge spaces via the gas branch section. The branch pipes are configured so that conductances thereof are substantially equivalent to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.