Method of fabricating photoelectric device of group III nitride semiconductor and structure thereof
US8093082B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2009 |
| Grant date | Jan 10, 2012 |
| Priority date | — |
| Expiry date | Nov 24, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
Abstract
A method of fabricating a photoelectric device of Group III nitride semiconductor, where the method comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of a temporary substrate; patterning the first Group III nitride semiconductor layer using photolithography and etching processes; forming a second Group III nitride semiconductor layer on the patterned first Group III nitride semiconductor layer; forming a conductive layer on the second Group III nitride semiconductor layer; and releasing the temporary substrate by removing the first Group III nitride semiconductor layer to obtain a composite of the second Group III nitride semiconductor layer and the conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.