Thyristor semiconductor memory and method of manufacture
US8093107B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2008 |
| Grant date | Jan 10, 2012 |
| Priority date | — |
| Expiry date | Sep 17, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/251
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A thyristor based semiconductor device includes a thyristor having cathode, P-base, N-base and anode regions disposed in electrical series relationship. The N-base region for the thyristor has a cross-section that defines an inverted “T” shape, wherein a buried well in semiconductor material forms is operable as a part of the N-base. The stem to the inverted “T” shape extends from the upper surface of the semiconductor material to the buried well. The P-base region for the thyristor extends laterally outward from a side of the stem that is opposite the anode region of the thyristor, and is further bounded between the buried well and a surface of the semiconductor material. A thinned portion for the N-base is defined between the cathode region of the thyristor and the buried well, and may include supplemental dopant of concentration greater than that for some other portion of the N-base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.