Semiconductor structure and method of forming the same
US8093118B2 · kind B2 · utility
10Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2009 |
| Grant date | Jan 10, 2012 |
| Priority date | — |
| Expiry date | Jun 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure and a method of forming the same are provided. The semiconductor structure includes a substrate, a resistor and a metal gate structure. The substrate has a first area and a second area. The resistor is disposed in the first area, wherein the resistor does not include any metal layer. The metal gate structure is disposed in the second area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.