Phase change memory device with heater electrodes having fine contact area and method for manufacturing the same
US8093134B2 · kind B2 · utility
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Key dates
| Filing date | Nov 9, 2010 |
| Grant date | Jan 10, 2012 |
| Priority date | — |
| Expiry date | Nov 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A phase change memory device includes a semiconductor substrate having a conductive region, a heater electrode formed on the semiconductor substrate and including a connection element which is composed of carbon nanotubes electrically connected with the conductive region, and a phase change pattern layer contacting the connection element of the heater electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.