Methods of manufacturing semiconductor devices and structures thereof

US8093150B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Michael Beck · Milpitas, US
• Erdem Kaltalioglu · Newburgh, US

Key dates

• Filing date: Sep 19, 2006
• Grant date: Jan 10, 2012
• Expiry date: Mar 6, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76832
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods of manufacturing semiconductor devices are disclosed. A preferred embodiment comprises a method of manufacturing a semiconductor device, the method including providing a workpiece, disposing an etch stop layer over the workpiece, and disposing a material layer over the etch stop layer. The material layer includes a transition layer. The method includes patterning the material layer partially with a first pattern, and patterning the material layer partially with a second pattern. Patterning the material layer partially with the second pattern further comprises simultaneously completely patterning the material layer with the first pattern.