Memristive device with a bi-metallic electrode

US8093575B2 · kind B2 · utility

Assignee

• HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. · US

Inventors

• Qiangfei Xia · Palo Alto, US
• Xuema Li · East Palo Alto, US
• Jianhua Yang · Palo Alto, US

Key dates

• Filing date: Apr 20, 2009
• Grant date: Jan 10, 2012
• Expiry date: Oct 29, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8836

Abstract

A memristive device having a bimetallic electrode includes a memristive matrix, a first electrode and a second electrode. The first electrode is in electrical contact with the memristive matrix and the second electrode is in electrical contact with the memristive matrix and an underlying layer. At least one of the first and second electrodes is a bimetallic electrode which includes a conducting layer and a metallic layer.