Semiconductor device with an active layer containing zinc oxide, manufacturing method, and electronic device
US8093589B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 14, 2004 |
| Grant date | Jan 10, 2012 |
| Priority date | — |
| Expiry date | Sep 11, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
In a thin film transistor (1), a gate insulating layer (4) is formed on a gate electrode (3) formed on an insulating substrate (2). Formed on the gate insulating layer (4) is a semiconductor layer (5). Formed on the semiconductor layer (5) are a source electrode (6) and a drain electrode (7). A protective layer (8) covers them, so that the semiconductor layer (5) is blocked from an atmosphere. The semiconductor layer (5) (active layer) is made of, e.g., a semiconductor containing polycrystalline ZnO to which, e.g., a group V element is added. This allows practical use of a semiconductor device which has an active layer made of zinc oxide and which includes an protective layer for blocking the active layer from an atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.