Engineered structure for solid-state light emitters
US8093604B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2006 |
| Grant date | Jan 10, 2012 |
| Priority date | — |
| Expiry date | May 23, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B20/30
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An engineered structure of a light emitting device comprises multiple layers of alternating active and buffer materials disposed between AC or DC electrodes, which generate an electric field. The active layers comprise luminescent centers, e.g. group IV semiconductor nanocrystals, in a host matrix, e.g. a wide bandgap semiconductor or dielectric material such as silicon dioxide or silicon nitride. The buffer layers are comprised of a wide bandgap semiconductor or dielectric material, and designed with a thickness, in the direction of an applied electric field, that ensures that electrons passing therethrough picks up enough energy to excite the luminescent centers in the adjacent active layer at an excitation energy to emit light efficiently at a desired wavelength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.