Multi-layer ohmic electrode, semiconductor light emitting element having multi-layer ohmic electrode, and method of forming same
US8093618B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 11, 2007 |
| Grant date | Jan 10, 2012 |
| Priority date | — |
| Expiry date | Jun 2, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
There are provided an ohmic electrode, which includes a contact layer made of an Al alloy and formed on a nitride-based semiconductor layer functioning as a light emitting layer, a reflective layer made of Ag metal, formed on the contact layer and having some particles in-diffused to the semiconductor layer, and a protective layer formed on the reflective layer to restrain out-diffusion of the reflective layer; a method of forming the ohmic electrode; and a semiconductor light emitting element having the ohmic electrode. The present invention has strong adhesive strength and low contact resistance since the reflective layer and the light emitting layer directly form an ohmic contact due to the interface reaction during heat treatment, and the present invention has high light reflectance and excellent thermal stability since the contact layer and the protective layer restrain out-diffusion of the reflective layer during heat treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.