High pressure apparatus and method for nitride crystal growth
US8097081B2 · kind B2 · utility
65Cited by
51References
19Claims
0Family size
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Inventor
Key dates
| Filing date | Jun 5, 2008 |
| Grant date | Jan 17, 2012 |
| Priority date | — |
| Expiry date | Mar 18, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1096
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. IN a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.