Semiconductor device and methods thereof
US8097499B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2007 |
| Grant date | Jan 17, 2012 |
| Priority date | — |
| Expiry date | Aug 19, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0242
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method thereof. The example method may include forming a semiconductor device, including forming a first layer on a substrate, the first layer including aluminum nitride (AlN), forming a second layer by oxidizing a surface of the first layer and forming a third layer on the second layer, the first, second and third layers each being highly oriented with respect to one of a plurality crystallographic planes. The example semiconductor device may include a substrate including a first layer, the first layer including aluminum nitride (AlN), a second layer formed by oxidizing a surface of the first layer and a third layer formed on the second layer, the first, second and third layers each being highly oriented with respect to one of a plurality crystallographic planes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.