Modular methods of forming isolation structures for integrated circuits
US8097522B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 8, 2007 |
| Grant date | Jan 17, 2012 |
| Priority date | — |
| Expiry date | Feb 19, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be used in combination with doped sidewall isolation regions. Both the trench and the sidewall isolation regions may be annular and enclose an isolated pocket of the substrate. The isolation structures are formed by modular implant and etch processes that do not include significant thermal processing or diffusion of dopants so that the resulting structures are compact and may be tightly packed in the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.