Jun-Wei Chen
49Patents
18h-index
70Co-inventors
84Inventor score
Filing activity: May 12, 1992 → Jul 20, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5426328A | BICDMOS structures | Emerging Cross-Sectional Technologies | 127 | Expired |
| US5404040A | Structure and fabrication of power MOSFETs, including termination structures | Electricity | 72 | Expired |
| US5374569A | Method for forming a BiCDMOS | Emerging Cross-Sectional Technologies | 67 | Expired |
| US5648281A | Method for forming an isolation structure and a bipolar transistor on a semiconductor substrate | Emerging Cross-Sectional Technologies | 50 | Expired |
| US7719054B2 | High-voltage lateral DMOS device | Electricity | 49 | Active |
| US5559044A | BiCDMOS process technology | Emerging Cross-Sectional Technologies | 49 | Expired |
| US5304831A | Low on-resistance power MOS technology | Electricity | 42 | Expired |
| US5751054A | Zener diodes on the same wafer with BiCDMOS structures | Emerging Cross-Sectional Technologies | 34 | Expired |
| US5521409A | Structure of power mosfets, including termination structures | Electricity | 33 | Expired |
| US7812393B2 | High-voltage extended drain MOSFET | Electricity | 29 | Active |
| US5429964A | Low on-resistance power MOS technology | Electricity | 29 | Expired |
| US5541125A | Method for forming a lateral MOS transistor having lightly doped drain formed along with other transistors in the same substrate | Emerging Cross-Sectional Technologies | 25 | Expired |
| US5416039A | Method of making BiCDMOS structures | Emerging Cross-Sectional Technologies | 24 | Expired |
| US5422508A | BiCDMOS structure | Emerging Cross-Sectional Technologies | 21 | Expired |
| US5618743A | MOS transistor having adjusted threshold voltage formed along with other transistors | Emerging Cross-Sectional Technologies | 20 | Expired |
| US5439842A | Low temperature oxide layer over field implant mask | Electricity | 19 | Expired |
| US5420451A | Bidirectional blocking lateral MOSFET with improved on-resistance | Emerging Cross-Sectional Technologies | 18 | Expired |
| US5541123A | Method for forming a bipolar transistor having selected breakdown voltage | Emerging Cross-Sectional Technologies | 18 | Expired |
| US5643820A | Method for fabricating an MOS capacitor using zener diode region | Emerging Cross-Sectional Technologies | 17 | Expired |
| US5451533A | Bidirectional blocking lateral MOSFET with improved on-resistance | Emerging Cross-Sectional Technologies | 16 | Expired |
| US5547880A | Method for forming a zener diode region and an isolation region | Emerging Cross-Sectional Technologies | 15 | Expired |
| US5583061A | PMOS transistors with different breakdown voltages formed in the same substrate | Emerging Cross-Sectional Technologies | 12 | Expired |
| US7626243B2 | ESD protection for bipolar-CMOS-DMOS integrated circuit devices | Electricity | 9 | Active |
| US9525045B1 | Semiconductor devices and methods for forming the same | Electricity | 5 | Active |
| US8097522B2 | Modular methods of forming isolation structures for integrated circuits | Electricity | 5 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.