Method of forming epitaxial layer
US8097527B2 · kind B2 · utility
12Cited by
1References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 10, 2008 |
| Grant date | Jan 17, 2012 |
| Priority date | — |
| Expiry date | Jul 10, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02661
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an epitaxial layer on a silicon substrate includes (a) providing a silicon substrate; (b) performing a wet-cleaning process onto the silicon substrate; (c) performing a first plasma cleaning process onto the wet-cleaned silicon substrate by providing a chlorine (Cl2) gas and an argon (Ar) gas; and (d) forming an epitaxial growth film on the silicon substrate after the (c) step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.