Scanning electron microscope
US8097848B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2009 |
| Grant date | Jan 17, 2012 |
| Priority date | — |
| Expiry date | Sep 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2605
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a VP-SEM that uses gas multiplication induced within a low-vacuum sample chamber and uses a method of detecting a positive displacement current, a secondary electron detector for the VP-SEM that responds at high speed, which can acquire a TV-Scan rate image at a low cost while saving a space is provided. A secondary electron detector is formed by forming the electron supplying electrode and the detection electrode on the flexible thin film type substrate such as a polyimide film, etc., by an etching method. Thereby, the space can be saved while realizing low cost due to mass production. Further, the ion horizontally moving with respect to the surface of the secondary electron detector is detected and the ion moving in a vertical direction returned to the sample holder is not detected, making it possible to realize a high-speed response.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.