Programmable resistive memory cell with sacrificial metal
US8097874B2 · kind B2 · utility
90Cited by
3References
20Claims
0Family size
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Key dates
| Filing date | Jul 10, 2009 |
| Grant date | Jan 17, 2012 |
| Priority date | — |
| Expiry date | Jan 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8416
Abstract
Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. A sacrificial metal is disposed between the electrochemically active electrode and the inert electrode. The sacrificial metal has a more negative standard electrode potential than the filament forming metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.