Semiconductor devices with trench isolations

US8097930B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Mayank Shrivastava · South Burlington, US
• Harald Gossner · Riemerling, DE
• Ramgopal Rao · Mumbai, IN
• Maryam Shojaei Baghini · Mumbai, IN

Key dates

• Filing date: Aug 8, 2008
• Grant date: Jan 17, 2012
• Expiry date: Jul 10, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/307

Abstract

In an embodiment, a semiconductor device is provided. The semiconductor device may include a first diffusion region, a second diffusion region an active region disposed between the first diffusion region and the second diffusion region, a control region disposed above the active region, a first trench isolation disposed laterally adjacent to the first diffusion region opposite to the active region, and a second trench isolation disposed between the second diffusion region and the active region. The second trench isolation may have a smaller depth than the first trench isolation.