Self-planarized passivation dielectric for liquid crystal on silicon structure and related method
US8098351B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 13, 2008 |
| Grant date | Jan 17, 2012 |
| Priority date | — |
| Expiry date | Sep 12, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/133357
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
According to an exemplary embodiment, a liquid crystal on silicon (LCoS) structure includes a number of pixel electrodes overlying an interlayer dielectric, where diagonally adjacent pixel electrodes are separated by a gap. The LCoS structure further includes a self-planarizing passivation dielectric situated over the pixel electrodes and in the gap, where the self-planarizing passivation dielectric has a selected thickness. The self-planarizing passivation dielectric can be an Oxide-Nitride-Oxide (ONO) stack. The selected thickness of the self-planarizing passivation dielectric causes the self-planarizing passivation dielectric to have a substantially planar top surface. In one embodiment, the thickness of the self-planarizing passivation dielectric can be approximately equal to twice a width of the gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.