Edge removal of films using externally generated plasma species
US8100081B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2006 |
| Grant date | Jan 24, 2012 |
| Priority date | — |
| Expiry date | May 13, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6708
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides methods and apparatuses for removing unwanted film from the edge area of substrate using remotely-generated plasmas. Activated plasma species are directed to the edge of the substrate to contact and remove the unwanted film, while intrusion of the activated species to areas above the active circuit region (where the film is desired) is suppressed. In certain embodiments, intrusion of the activated species is suppressed by the use of a purge gas and/or the use of materials that promote recombination of plasma species. In particular embodiments, atomic oxygen is used to remove ashable films from the edge of semiconductor wafers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.