Light emitting diode element and method for fabricating the same
US8101447B2 · kind B2 · utility
4Cited by
9References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 20, 2007 |
| Grant date | Jan 24, 2012 |
| Priority date | — |
| Expiry date | Jun 4, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
Abstract
The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to obtain basins with inclined natural crystal planes, and an LED epitaxial structure is selectively formed inside the basin. Thereby, an LED element having several inclines is obtained. Via the inclines, the probability of total internal reflection is reduced, and the light extraction efficiency of LED is promoted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.