Method for making semiconductor device

US8101477B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventor

• John Power · Kilmacthomas, IE

Key dates

• Filing date: Sep 28, 2010
• Grant date: Jan 24, 2012
• Expiry date: Sep 28, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/696

Abstract

One or more embodiments relate to a method for forming a memory device, the memory device including a control gate, a charge storage structure and a select gate, the method comprising: forming a gate tower, the gate tower including the control gate over the charge storage structure; forming a dummy tower laterally spaced apart from the gate tower; and forming a select gate between the gate tower and the dummy tower.