Method for making semiconductor device

US8101492B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• John Power · Kilmacthomas, IE
• Danny Pak-Chum Shum · Poughkeepsie, US

Key dates

• Filing date: Sep 23, 2009
• Grant date: Jan 24, 2012
• Expiry date: Jan 27, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/037

Abstract

One or more embodiments relate to a method of forming a semiconductor device, including: providing a substrate; forming a gate stack over the substrate, the gate stack including a control gate over a charge storage layer; forming a conductive layer over the gate stack; etching the conductive layer to remove a portion of the conductive layer; and forming a select gate, the forming the select gate comprising etching a remaining portion of the conductive layer.