Semiconductor device and manufacturing method thereof
US8101974B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2008 |
| Grant date | Jan 24, 2012 |
| Priority date | — |
| Expiry date | Jul 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device subjected to an optical annealing process by radiation light whose principal wavelength is 1.5 μm or less includes a circuit pattern region formed on a semiconductor substrate, and a dummy pattern region formed separately from the circuit pattern region on the semiconductor substrate. The circuit pattern region has an integrated circuit pattern containing a gate pattern related to a circuit operation. The dummy pattern region has dummy gate patterns that have the same structure as that of a gate pattern used in the integrated circuit pattern and the dummy gate patterns are repeatedly arranged with a pitch 0.4 times or less the principal wavelength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.