Circuit and photo sensor overlap for backside illumination image sensor
US8101978B2 · kind B2 · utility
12Cited by
9References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2008 |
| Grant date | Jan 24, 2012 |
| Priority date | — |
| Expiry date | Oct 28, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A backside illuminated (“BSI”) imaging sensor pixel includes a photodiode region and pixel circuitry. The photodiode region is disposed within a semiconductor die for accumulating an image charge in response to light incident upon a backside of the BSI imaging sensor pixel. The pixel circuitry includes transistor pixel circuitry disposed within the semiconductor die between a frontside of the semiconductor die and the photodiode region. At least a portion of the pixel circuitry overlaps the photodiode region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.